2sb874 silicon pnp epitaxial application low frequency power amplifier complementary pair with 2sd1177 outline to-220ab 1. base 2. collector (flange) 3. emitter 1 2 3 absolute maximum ratings (ta = 25 c) item symbol rating unit collector to base voltage v cbo C100 v collector to emitter voltage v ceo C60 v emitter to base voltage v ebo C5 v collector current i c C2 a collector peak current i c(peak) C3 a collector power dissipation p c * 1 20 w junction temperature tj 150 c storage temperature tstg C55 to +150 c note: 1. value at t c = 25 c
2sb874 2 electrical characteristics (ta = 25 c) item symbol min typ max unit test conditions collector to base breakdown voltage v (br)cbo C100 v i c = C1 ma, i e = 0 collector to emitter breakdown voltage v (br)ceo C60 v i c = C10 ma, r be = emitter to base breakdown voltage v (br)ebo C5 v i e = C1 ma, i c = 0 collector cutoff current i cbo C1.0 m av cb = C80 v, i e = 0 emitter cutoff current i ebo C1.0 m av eb = C5 v, i c = 0 dc current transfer ratio h fe1 * 1 60 200 v ce = C5 v, i c = C0.5 a* 2 h fe2 40 v ce = C5 v, i c = C2 a* 2 base to emitter voltage v be C1.4v v ce = C5 v, i c = C2 a* 2 collector to emitter saturation voltage v ce(sat) C0.6 C1.0 v i c = C1.5 a i b = C0.15 a* 2 gain bandwidth product f t 250 mhz v ce = C5 v, i c = C0.5 a* 2 collector output capacitance cob 50 pf v cb = C10 v, i e = 0, f = 1 mhz notes: 1. the 2sb874 is grouped by h fe as follows. 2. pulse test bc 60 to 120 100 to 200 0 50 100 150 case temperature t c ( c) collector power dissipation pc (w) maximum collector dissipation curve 10 20 30 ?.01 ?.03 ?.1 ?.3 ?.0 ?0 ? collector to emitter voltage v ce (v) collector current i c (a) ? ? ?0 ?0 ?0 ?00 ?00 area of safe operation i c (peak) (?0 v, ? a) (?0 v, ? a) (?3.3 v, ? a) (?0 v, ?.33 a) (?0 v, ?.25 a)
(?0 v, ?.15 a)
(?0 v, ?.1 a) i c (max) (?0 v, ? a) pw = 1 ms dc operation
(t c = 25 c) ta = 25 c
1 shot pulse 10 ms
2sb874 3 collector to emitter voltage v ce (v) collector current i c (a) 0 2 4 6 8 10 typical output characteristics ?.2 ?.4 ?.6 ?.8 ?.0 t c = 25 c i b = 0 ? ma ? ? ? ? ? ? ? ?2 ?1 ? ?0 ?.02 ?.05 ?.1 ?.2 ?.5 ?.0 ? base to emitter voltage v be (v) collector current i c (a) ?.5 ?.5 ?.0 typical transfer characteristics v ce = ? v t c = 25 c 75 c ?5 c 10 20 50 100 200 500 1,000 collector current i c (a) dc current transfer ratio h fe ?.02 ?.05 ?.1 ?.2 ?.5 ? ? dc current transfer ratio vs.
collector current v ce = ? v
t c = 75 c 25 c ?5 c ?.01 ?.03 ?.1 ?.3 ?.0 collector current i c (a) collector to emitter saturation voltage
v ce (sat) (v) ?.02 ?.05 ?.1 ?.2 ?.5 ? ? collector to emitter saturation
voltage vs. collector current t c = ?5 c 75 c 25 c i c /i b = 10
2sb874 4 notice when using this document, keep the following in mind: 1. this document may, wholly or partially, be subject to change without notice. 2. all rights are reserved: no one is permitted to reproduce or duplicate, in any form, the whole or part of this document without hitachis permission. 3. hitachi will not be held responsible for any damage to the user that may result from accidents or any other reasons during operation of the users unit according to this document. 4. circuitry and other examples described herein are meant merely to indicate the characteristics and performance of hitachis semiconductor products. hitachi assumes no responsibility for any intellectual property claims or other problems that may result from applications based on the examples described herein. 5. no license is granted by implication or otherwise under any patents or other rights of any third party or hitachi, ltd. 6. medical applications: hitachis products are not authorized for use in medical applications without the written consent of the appropriate officer of hitachis sales company. such use includes, but is not limited to, use in life support systems. buyers of hitachis products are requested to notify the relevant hitachi sales offices when planning to use the products in medical applications.
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